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Name: |
Artyom
Vahanyan |
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Title: |
Candidate of Phys.-Math. Sciences |
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Telephone/Fax: |
+374 10
272372
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E-mail: |
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Graduate: |
Dept. of Physics and Mathematics, Physics
and Mathematics |
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Candidate: |
Physics of semiconductors and dielectrics,
1983 Investigations of the physical
properties of gallium and indium phosphides solid solutions and some
questions of the electrons statistics in the many-valley semiconductors |
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Main Research Interests: |
Semiconductors solid solutions, thermal
kinetics phenomena, the questions of the statistics of the many-valley semiconductors |
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Subsidiary Research Interests: |
High
temperature superconductivity |
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Research Experience: |
Governmental grant of Ministry of Science
and Education of Armenia ISTC grant A-322, ISTC grant A-1232. |
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Main Publications: 1.
G.M.Avakyants, A.I.Vahanyan,
M.L.Beglaryan. Electrophysical properties of the
In1-x GaxP solid solutions. Reports SA Arm.SSR,
v.50, N 5, p.273-277, (1970). 2.
G.M.Avakyants, A.I.Vahanyan,
M.L.Beglaryan. On the electrons scattering mechanisms
in the In1-xGaxP solid solutions. J. of
Contemporary Physics, v.13, N 2, p.118-126, (1978). 3.
A.I.Vahanyan. On the determination of some parameters of the band
structure of the many-valley semiconductors. Sov. Phys. Semicond.,
v.16, N 3, p.520-523, (1982). 4.
A.I.Vahanyan. On the thermoelectromotive force of the many-valley
semiconductors. J. of Contemporary Physics, N 6,(1985). |
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Recent Publications: 2.
A.G.Sarkissyan, A.I.Vahanyan,
E.M.Baghiyan, K.H.Begoyan. Investigations of the
thermoconductivity of the high temperature superconductivity on the bismut
base, Proc.of the II National Conf. Semiconductor microelectronics, 3.
Ju.A.Abrahamyan,
V.M.Aroutiounian, A.I.Vahanyan, F.V.Gasparyan, E.M.Baghiyan. Semiconductors compounds Pb1-xSnxTe<Cd>
with high values of thermoemf. Proc.of the II National Conf.
Semiconductor microelectronics, 4.
V.M.Aroutunyan,
V.A.Vagharshakyan, A.I.Vahanyan, S.A.Minassyan, N.V.Shalaev. On possibility for application of thermogenerators in
the motorcar industry. Reports SA RA, N 2, p. 253-255, (2000 5. A.I. Vahanyan, E.M.Baghiyan,
V.A.Vagharshakyan, Ju.A.Abrahamyan. Investigation
of the influence of high-speed electron’s irradiation on the
thermoelement efficiency. Proc.of the 3rd Nat. Conf.
Semiconductor microelectronics, Sevan, p. 151, (2001 6. Yu.A.Abrahamian, A.I.Vahanyan,
F.V.Gasparian, V.A. Vagarshakian, G.G. Karamian, M S.G.artirosian, V.I.
Stafeev, High-Sensitive Multielement Line (Matrixes)
on the Basis of Field-Effect Transistors With Easily Reproduced Production
Technology, Infr.and Mill. v.23,N12,pp1753-1764(2002). 7. F.V. Gasparyan, V.M. Aroutiounian, Yu.A.Abrahamian, A.I. Vahanyan, Thermoelectric coefficient of the non-homogeneously
doped p-n junctions made on Si and Pb0.8Sn0.2Te, Proc. of EMRS-2003,
Strasburg, France, June 10-13. 8. Yu.A. Abrahamian, A.I.Vahanyan,
V.A. Vagarshakian, F.V. Gasparian, G.G. Karamian, A.G. Sarkisian, V.I. 9.
A.I. Vahanyan, V.M. Aroutionian, E.M. Baghiyan, A.O.
Yepremyan, Yu.A. Abrahamian, Investigations of
thermoelectric parameters of solid solutions Pb1-xSnxTe<Cd>
and determination of their applications, Materials
Science & Engineering B, v. 107, N1, pp. 78-83(2004). 10. F.V. Gasparyan, V.M. Aroutiounian, Yu.A.
Abrahamian, A.I. Vahanyan, Thermoelectric coefficient
of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te,
Sensors and Actuators A: Physical, v. 113, N3, pp. 370-375(2004). 11. E.G. Zargaryan, A.G. Sargissyan
A.I. Vahanyan,, E.A. Mughnetsyan, E.L. Ignatyan, Effect of fluorinaion on the
thermal conductivity of superconducting ceramics synthesized on the base of
YBa2Cu3Oy, Proceeding of the fifth international conference of
semiconductors micro-and nanoelectronics, Agveran, , с.78-81 (september 16-18,2005) 12. A.I. Vahanyan, A method for the thermal conductivity measurement of
semiconductors, Measurement, N39, pp. 447-450(2006) |
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