upated April 2010

 

Name:

 

 Slavik V. melkonyan

Title:

Senior research scientist, Prof., Doctor of Sciences-Physics

Telephone/Fax:

 (37410) 548501 / (37410) 555590

E-mail:

smelkonyan@ysu.am

Graduated:

Dept. of Semiconductors and Dielectrics Physics, Faculty of Radiophysics, Yerevan State University, 1980

xPost Graduate:

Semiconductors and Dielectrics Physics Chair of Yerevan State University, 1986

Candidate:

Physics of Semiconductors and Dielectrics, Institute of Radiophysics and Electronics at National Academy of Sciences of Armenia, Ashtarak, Armenia, 1990

Analysis of Noise in p+nn+ Structures Based on Semiconductor Compensated by Deep Levels

Doctor of Sciences-Physics   

Physics of Semiconductors, Yerevan State University, Yerevan, Armenia, 2006

Phonon Equilibrium 1/f-Fluctuations of Electron Lattice Mobility in Homogeneous Semiconductors

Main Research Interests:

Fluctuations phenomena in semiconductor materials and devices

Subsidiary Research Interests:

Surface phenomena, Solid-state physics, Statistical physics

Research Experience:

Governmental grant of Ministry of Science and Education of Armenia

CRDF grant ARP2-2678-YE-05

ISTC grant A-1232

Recent Publications:

 

1. S.V. Melkonyan, Non-Gaussian conductivity fluctuations in semiconductors, Physica B, v.405, N1 (2010) 379-385.

2. S.V. Melkonyan, On the low-frequency limit of the Schonfeld pulse 1/f-law, Physica B, v.403, N12 (2008) 2029-2035.

3. A.P. Hakhoyan, S.V. Melkonyan, Features of the refractive index of porous silicon with gradient porosity, Armenian Journal of Physics, v.1 (2008) 146-150.

4. S.V. Melkonyan, F.V. Gasparyan, H.V. Asriyan, Main Sources of Electron Mobility Fluctuations in Semiconductors; Noise and Fluctuations in Circuits, Devices and Materials; Ed. by Massimo Macucci, Lode K. Vandamme, Carmine Ciofi, Michael B. Weissman; Proc. of SPIE v.6600 (2007) 66001K-1 - 66001K-8.

5. F.V. Gasparyan, Can E. Korman, S.V. Melkonyan, Noises of p-i-n UV Photodetectors; Noise and Fluctuations in Circuits, Devices and Materials; Ed. by Massimo Macucci, Lode K. Vandamme, Carmine Ciofi, Michael B. Weissman; Proc. of SPIE v.6600 (2007) 66001L-1 - 66001L-9.

 

Other Publications (overall number - 60):

 

1. S.V. Melkonyan, V.M. Aroutiounian, F.V. Gasparyan, H.V. Asriyan, Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise, Physica B, v.382, N1-2 (2006) 65-70.

2. S.V. Melkonyan, V.M. Aroutiounyan, F.V. Gasparyan, C.E. Korman, Peculiarities of electron distribution function's fluctuations damping in homogenous semiconductors, Physica B, v.357, N3-4 (2005) 398-407.

3. S.V. Melkonyan, F.V. Gasparyan, V.M. Aroutiounian, H.V. Asriyan, 1/f noise in view of phonon interface percolation dynamics, 18th International Conference on Noise and Fluctuations (ICNF 2005), Salamanca, Spain, 2005, 87-90.

4. S.V. Melkonyan, Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface, Proc. of SPIE's Second International Symposium on Fluctuations and Noise (Noise and Information in Nanoelectronics, Sensors, and Standards II) v.5472 (2004) 401-408.

5. S.V. Melkonyan, F.V. Gasparyan, V.M. Aroutiounian, C.E. Korman, Slow damping of electron distribution function fluctuations in equilibrium semiconductors, Noise and Information in Nanoelectronics, Sensors, and Standards II, Ed. by Janusz M. Smulko, Yaroslav Blanter, Mark I. Dykman, Laszlo B. Kish, Proc. of SPIE, v. 5472 (2004) 391-400.

6. H.V. Asriyan, F.V. Gasparyan, V.M. Aroutiounian, S.V. Melkonyan, P. Sukiassian, Low-frequency noise in non-homogeneously doped semiconductor, Sensors and Actuators, A113 (2004) 338-343.

7. S.V. Melkonyan, Current 1/f-fluctuations in equilibrium semiconductor; Noise and Information in Nanoelectronics, Sensors, and Standards, Ed. by Laszlo B. Kish, F. Green, G. Iannaccone, J.R. Vig, Proc. of SPIE, v.5115 (2003) 421-428.

8. S.V. Melkonyan, F.V. Gasparyan, V.M. Aroutiounyan, C.E. Korman, Current carrier mobility fluctuations in homogeneous semiconductors; Noise and Information in Nanoelectronics, Sensors, and Standards, Ed. by Laszlo B. Kish, F. Green, G. Iannaccone, J.R. Vig, Proc. of SPIE, v.5115 (2003) 412-420.

9. S.V. Melkonyan, F.V. Gasparyan, V.M. Aroutiounyan, H.V. Asriyan, Temperature Chaos and the Lattice Character of the Hooge parameter in Semiconductors, Mod. Phys. Letters B, v.12, N29-30 (1998) 1245-1254.

10. S.V. Melkonyan, F.V. Gasparyan, V.M. Aroutiounyan, Low Frequency Noise Behavior in Semiconductors, Mod. Phys. Letters B, v.11, N20 (1997) 899-907.

11. V.M. Arutyunyan, Z.N. Adamyan, F.V. Gasparyan, S.V. Melkonyan, Noises in p+nn+ Structures Based on Semiconductors Compensated by Double Charged Acceptors, Radiophys. And Quantum Electron., v.34, N10-12 (1992) 946-952.