Name:

MARGARITA KAZARYAN

Title:

Sci. worker of Laboratory of Physics of Semiconductor Materials and Devices, Yerevan State University, Armenia

Telephone/Fax:

+374 10 578382

E-mail:

 

Graduate:

Dept. of Physic, Yerevan State University, Armenia,

 special. - radiophysics, 1971

Main Research Interests:

 

Solar energy conversion, physics and photoelectrochemistry of semiconductors and semiconductor devices, optical cells, photoelectrical and optical properties of the semiconductor materials, thin films, semiconductor/electrolyte interface and A3B5 multilayer converters.

Subsidiary Research Interests:

Solar energy converters on the base of A3B5 semiconductor multilayer converters.

Research Experience:

Grant CRDF ARP2-10831-YE-3

Main Publications:

  1. A. G. Sargissian, W. Sh Zargaryan, M. S Khazaryan, Dependence of   photosensitivity InSb photodetectors on impurity concentration, Proc. Yer. State University, v.2 (1978).

 

  1. V. M. Aroutiounian, S. G Petrosyan, M. S Khazaryan, High sensitive photodetectors for near infrared region based on the concept of internal amplification, Application for invention rights N10 (1980).

 

  1. V. M. Aroutiounian, S. G. Petrosyan, M. S. Khazaryan, Impact ionization in varizone p-i-n structures, Solid State Physics (Russian), N14 (1981).

 

  1. A. O. Arakelyan, A. K. Arewyan, V. M. Arutyunyan, M. S. Kazaryan, V.A.Meliksetyan and V.L. Elbakyan, Silicon plate homogeneity diagnostics method by means of semiconductor-electrolyte structure surface photo-voltage measurement, Solid state phenomena, v.6 and 7, (1989).

 

  1.  A. O. Arakelyan, A. K. Arewyan, V. M. Arutyunyan, M. S. Kazaryan, V.A.Meliksetyan and V.L. Elbakyan, Technique for homogeneity diagnostic  of semiconductor materials by the way of measuring the capacitor near-surface h photo-voltage of the semiconductor/electrolyte structure, 7- th   international Conf. on Microelectronics’ 90 October 16-18, v. 1, pp. 296-297 (1990).

 

  1. V. A. Gevorkyan, K. M. Ganbaryan, M.S. Kazaryan, K.J. Touryan, M.W. Wanlass. Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-voltaic application, Proc. IV Nat. Conf. Semiconductor Microelectronics. pp. 156-159(2003).

 

  1. V. A. Gevorkyan, K. M. Ganbaryan, M.S. Kazaryan, K.J. Touryan, M.W. Wanlass, Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-voltaic application, E-MRS and Spring Meeting. Palais des congress-Strasburg, France, June 10-14 (2004)

 

  1. V. A. Gevorkyan, V. M. Aroutiounian, K. M. Ganbaryan, M.S. Kazaryan, K. J. Touryan, M. W. Wanlass, Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-voltaic application, E-MRS Spring Meeting, Strasburg, France, (2003).

 

  1. V. A. Gevorkyan, V. M. Aroutiounian, K. M. Gambaryan, M. S. Kazaryan, K. J.Touryan, M. W. Wanlass, Liquid – Phase Electroepitaxial Growth of Low Band – Gap p-InAsPSb/n-InAs and p-InAsP/n-InAs Diode Heterostructures for Thermo – Photovoltaic Application, Thin Solid Films, v. 451–452,  pp. 124–127(2004).

 

10. V. A. Gevorkyan, K. M. Gambaryan, A. H. Arakelyan, M. S. Kazaryan, H.S. Chilingaryan, T. Boeck, P. M. Wilde, Narrow band-gap InAsPSb/InAs diode heterostructures for thermo-photovoltaic application, The fifth international conference "Semiconductor micro- and nanoelectronics", pp. 207-210 (2005).

 

11. V. A. Gevorkyan, K. M. Gambaryan, A. N. Arakelyan, M. S. Kazaryan, T. Boeck, P.-M. Wilde, The epitaxial growth of low band-gap InAs based diode heterostructures for thermo-photovoltaic application, Energy for future the second renewable energy conference, June 27-28, Yerevan, (2005).

 

 

 

 

Recent Publications:

 

  1. Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-voltaic application

     Proc. IV Nat. Conf. Semiconductor Microelectronics (2003), 156-159

            V.A. Gevorkyan, K.M. Ganbaryan, M.S. Kazaryan, K.J. Touryan, M.W. Wanlass

 

  1.  Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-voltaic application

     E-MRS Spring Meeting, Strasburg, France, (2003)

          V.A. Gevorkyan, V. M. Aroutiounian, K.M. Ganbaryan, M.S. Kazaryan, K.J.     Touryan, M.W. Wanlass

 

  1. Liquid – Phase Electroepitaxial Growth of Low Band – Gap p-InAsPSb/n-InAs and p-InAsP/n-InAs Diode Heterostructures. for Thermo – Photovoltaic Application. –  Thin Solid Films, Volumes 451–452(2004), 124–127

  V.A.Gevorkyan, V.M.Aroutiounian, K.M.Gambaryan, M.S.Kazaryan, K.J.Touryan, M.W.Wanlass

 

4.     Narrow band-gap InAsPSb/InAs diode heterostructures for thermo-photovoltaic application

The fifth international conference "Semiconductor micro- and nanoelectronics"(2005), 207-210

   V.A. Gevorkyan, K.M. Gambaryan, A.H.Arakelyan, M.S. Kazaryan, H.S. Chilin-garyan, T. Boeck, P.-M. Wilde

 

5.    The epitaxial growth of low band-gap InAs based diode heterostructures for thermo-photovoltaic application

     Energy for future the second renewable energy conference, june 27-28,  Yerevan (2005)

            V.A. Gevorkyan, K.M. Gambaryan, A.N. Arakelyan, M.S. Kazaryan, T. Boeck, P.M. Wilde