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updated April 2010
Name: |
Khachatur Martirosyan
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Title: |
Researcher of Laboratory of Physics of Semiconductor
Materials and Devices,
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Telephone/Fax: |
+374 10 578382
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E-mail: |
khachaturmartirosyan@gmail.com
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Graduated:
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Dept.
of Radiophysic, Physics
of Semiconductors and Microelectronics,
2004
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| Awards:
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Armenian President Award 2006 in the field "Technical Sciences and Informatin Technologies" | ||
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Main Research
Interests:
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Solar photovoltaic converters, chemical gas sensors and biosensors |
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Subsidiary Research Interests: |
Porous silicon based layers |
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Research & Work Experience:
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2001- up to now Researcher of Laboratory of Physics of Semiconductor Materials and Devices Governmental
grant of Ministry of Science and Education of Armenia
ISTC grant A-233 ISTC grant A-1232 2008- up to now Member of Editorial board of "Journal of Contemporary Physics (Armenian Academy of Sciences)" and "Armenian Journal of Physics: Open Access" |
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| Educational courses:
(Specail Training for Students of the Synopsys Corporation) |
IC Design Introduction IC Fabricaion |
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| Intellectual property | V. Aroutiounian, V. Arakelyan, V. Galstyan, Kh. Martirosyan, H. Asriyan, P. Soukiassian, no. AM20060205, December 17, 2007 (National Patent) Aroutiounian V.M., Martirosyan Kh., Soukiassian P., Patent CEA/Yerevan State University (Armenia)/Universite de Paris-Sud/Orsey, no. 0552487, 10 August 2005 Aroutiounian V.M., Martirosyan Kh., Soukiassian P., Patent CEA/Yerevan State University (Armenia)/Universite de Paris-Sud/Orsey, no. 0405933, 2 June 2004 |
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Main Publications (overall number-19, international publications-10): 1. 2. V. M. Aroutiounian, Kh. S. Martirosyan, P. Soukiassian, Almost zero reflectance of a silicon oxynitride/porous silicon double-layer antireflection coatings for silicon photovoltaic cells, Journal of Physics D:Applied Physics, v.39, 1623-1625 (2006). 3. A. S. Hovhannisyan, V. M. Aroutiounian, Kh. S. Martirosyan, and V. E. Galstyan, Investigation of glucose sensitivity of porous silicon, Armenian Journal of Physics: Open Access, v.1(1), 38-42 (2008). 4. V. Aroutiounian, V. Arakelyan, V. Galstyan, K. Martirosyan, P. Soukiassian, Hydrogen sensor made of porous silicon covered by TiO2-x and ZnO<Al> thin film, IEEE Sensors Journal, v.9(1), 9-12 (2009).
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