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updatedl 04/2010 Name:
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Karen Gambaryan
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Title: |
Associate Professor, Candidate of Phys.-Math. Sci. |
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Telephone/Fax:
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374 10 588372; +374 10 555590 |
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E-mail: |
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Graduated:
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Radiophysics
Department of the YSU (1976-1981). Department of Social Sciences of the YSU
(English Language, Physicist-Interpreter) (1979-1981). |
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Post Graduate: |
Post Graduate of the Semiconductors Physics and Microelectronics Chair
of YSU (1981-1984). Semiconductors and Dielectrics Physics |
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Candidate: |
Institute of Radiophysics and Electronics (National Academy of
Sciences of RA), 1988. Application of liquid-phase electroepitaxy for
InAs-InP graded-gap structures growth |
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Main Research Interests: |
Physics of Semiconductors
and Semiconductor Devices; Semiconductor Materials and Devices Science and
Technology; III-V Binary and Multicomponent Alloys, Thin Films Epitaxy,
Nanotechnology, Nanoelectronics. |
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Subsidiary
Research Interests: |
Microwave and Infrared Devices, Solar and Thermal Energy Converters |
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Teaching Courses: |
Semiconductors
Materials Science and Technology; Thin Films Growth Technology; Materials and
Elements for Electronic Techniques. |
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Participation to the International Scientific Projects: |
Senior Scientific Researcher at: 1. International Science and Technology Center
(ISTC) Grant-Project # A-321. 2. International Science and Technology Center
(ISTC) Grant-Project # A-1232. 3. Civilian Research and Development Foundation
(CRDF) Grant-Project IPP-CRDF-ARP-2-010831-YE-04. 4. Civilian Research and Development Foundation
(CRDF) Grant Project IPP-CRDF-ARE-2-010838-YE-05. |
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Scientific Activity and International Employment: |
1. The International Workshop on Materials Science
and Physics of Non-Conventional Energy Sources.-18 September-6 October, 1995,
ICTP, Trieste, Italy. 2. The World Renewable Energy Network
International Seminar in Britain "Advancing Technology for Industralization
and Sustainable Development", 4-11 September, 1999, Brighton, UK (Oral
Presentation). 3. The World Renewable Energy
Congress-VI, 1-7 July, 2000, Brighton, UK (Poster Presentation). 4. The International School on Crystal Growth of
Materials for Energy Production and Energy-Saving Application.-ICTP, Trieste,
Italy , 4-10 March 2001 (Oral Presentation). 5. The Institute of Crystal Growth (IKZ), Berlin,
Germany -Guest Scientist (April-June 2002). 6. The Institute of Physics, Humboldt University, Berlin,
Germany, May 2002 (Oral Presentation). 7. The Institute of Material Science and
Engineering, University of Erlangen- Nurnberg, Erlangen, Germany, June 2002
(Oral Presentation). 8. Ruhr-University of Bochum, Bochum, Germany- Guest
Scientist (November-December 2004). 9. The International Workshop on Science and
Technology for Non-Conventional Energy Sources-"Physics for Renewable
Energy".-ICTP, Trieste, Italy, 17-29 October 2005 (Oral Presentation). 10. The Institute for Crystal Growth (IKZ), Berlin,
Germany-Guest Scientist (December 2007-January 2008). 11. Collaborative Conference on Interacting
Nanostructures (CCIN-09), November 9-13, San Diego, CA, USA. (Oral
Presentation). Member of the World Renewable Energy Network (WREN) Council, Member of
the International Steering Committee of the World Renewable Energy Congresses
(WREC) since 1998. |
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Honors: |
Profiled in the Marquis "Who's Who in the World",- 27th and
28th editions of Who's Who in the World, which profiles the most accomplished
men and women in the world for 2010 and 2011. |
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Visited Firms: |
1. "AIXTRON", Aachen, Germany 2. "THERMOMAX", Cardiff, Wales, United
Kingdom 3. "INEA", Trieste, Italy |
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Main Publications (in chronological order): 1. K.M.Gambaryan, V.A.Gevorkyan, L.V.Golubev, S.V.Novikov, Yu.V.Shmartsev. Analysis of impurity distribution
during equilibrium
liquid phase
electroepitqxy. -Sov. Phys. Tech. Phys. 29 (10), p. 1179, 1984. (Zh. Tech. Fiz., 54, pp. 2011-2015,
1984). 2. V.M.Aroutiounian, V.A.Gevorkyan, K.M.Gambaryan. The method of liquid phase electroepitaxy.-USSR Patent, N 1297521, 1985. 3. V.M.Aroutiounian, K.M.Gambaryan, V.A.Gevorkyan. Electroliquid epitaxy: a new approach to controlling
the composition of epitaxial layers of solid solution of III-V compounds.-Sov.
Phys. Tech. Phys. 31 (11), p. 1287, 1986. (Zh. Tech. Fiz., 56, pp. 2145-2151,
1986). 4. V.A.Gevorkyan, K.M.Gambaryan, T.S.Argunova, I.L.Shulpina. Dislocation structure and current-voltage
characteristics of n-InAs/p-InAsP diode heterostructures, grown by liquid
phase electroepitaxy.-Zh. Tech. Phys. Lett. 13 (18), pp. 1134-1139,
1987. 5. V.M.Aroutiounian, V.A.Gevorkyan, K.M.Gambaryan. The method of III-V compounds semiconductor structures
growth from liquid phase.-USSR Patent, N 1575586, 1990. 6. V.M.Aroutiounian, V.A.Gevorkyan, K.M.Gambaryan. Application pf new approach for liquid phase
electroepitaxial growth of graded-gap InSbAs layers.-Defect
engineering in semiconductor growth processing and device technology.
Materials Research Society, Spring 1992 Symposium, San-Francisco, CA, USA,
April 27-May 1, 1992. 7. V.M.Aroutiounian, V.A.Gevorkyan, K.M.Gambaryan. P-n junction formation in InSbAsBi ternary and
quaternary alloys by liquid phase electroepitaxy.-Defect engineering
in semiconductor growth processing and device technology. Materials Research
Society, Spring 1992 Symposium, San-Francisco, CA, USA, April 27-May 1, 1992.
8. K.M.Gambaryan, V.A.Gevorkyan, V.M.Aroutiounian. The growth of InSbAs(Bi) infrared photosensor
structures by liquid phase electroepitzxy. EUROSENSOR VI, Donostia,
San-Sebastian, Spain, 5-7 October, 1992. 9. V.M.Aroutiounian, V.A.Gevorkyan, K.M.Gambaryan. Liquid phase electroepitaxy of graded-gap
n-InAs/p-InAsP photodiodeds.-Materials Research Society, 1992 Fall
Meeting, Boston, Massachusetts, USA, November 30-December 4, 1992. 10. V.M.Aroutiounian,V.A.Gevorkyan,K.M.Gambaryan. The application of new approach of liquid phase
electroepitaxy for InSbAsBi layers and diode heterostructures growth.-Journal
of Contemporary Physics, v. 29, N 3, pp. 31-37, 1994. 11. V.M.Aroutiounian, V.A.Gevorkyan, K.M.Gambaryan. InSbAsBi as a new material for infrared detectors.-International
Conference on Application of Critical Technologies for the Needs of Society
(Joined Greece- Armenian International Conference), Yerevan, Armenia, 14-17
September, p. 46, 1995. (Oral Presentation). 12. K.M.Gambaryan, V.A.Gevorkyan, V.M.Aroutiounian. The growth of graded-gap III-V ternary compound
photovoltaic structures by new version of liquid phase electroepitaxy.-Renewable
Energy. Energy Efficiency, Policy and the Environment, part III,
pp.1701-1704, 1998. 13. K.M.Gambaryan. The application of
"liquid-sources" version of liquid phase electroepitaxy for
Thermo-PV structures and III-V multicomponent layers and crystals growth.-World
Renewable Energy Network International Seminar in Britain, September 4-11,
1999, Brighton, United Kingdom. (Oral Presentation). 14. K.M.Gambaryan, V.A.Gevorkyan, V.M.Aroutiounian. The InAs1-xPx (Bi) / InAs thermo-PV and InSb1-x Asx
(Bi) / InSb PV-structures growth by liquid-sources version of liquid-phase
electroepitaxy.-World Renewable Energy Congress-VI, 1-7 July, 2000,
Brighton, United Kingdom, part III, p.p. 1990 - 1992, 2000. (Poster Presentation).
15. K.M.Gambaryan, V.A.Gevorkyan. Liquid
Phase Electroepitaxy as a Technique for the Growth of III-V Compounds
Epitaxial Films and Device Heterostructures.-The International School
on Crystal Growth of Materials for Energy Production and Energy-Saving
Application, March 4-10, 2001, ICTP, Trieste, Italy. (Oral Presentation). 16. V.A.Gevorkyan, K.M.Gambaryan. The
Growth of Narrow Band-Gap III-V Compounds Thermo-PV Structures by Liquid
Phase Electroepitaxy.-"Semiconductor Microelectronics",
Proceedings of the Third National Conference, 10-12 September 2001, Sevan,
Armenia, p. 234. 17. V.A. Gevorkyan, V.M. Aroutiounian, K.M. Gambaryan. The Growth by Liquid-Phase Electroepitaxy of
Thermo-Photovoltaic Structures Based on Low Band-Gap InAs1-xPx Compounds.-World
Renewable Energy Congress-VII, 29 June-5 July 2002, Cologne , Germany , part
III, 2002 (Electronic Version). 18. V.A. Gevorkyan, K.M. Gambaryan, M.S.Kazaryan, K.J.Toutyan,
M.W.Wanlas. Liquid-Phase Electroepitaxial Growth
of Low Band-Gap p-InAsPSb/n-InAs and p-InAsP/n-InAs Diode Heterostructures
for Thermo-Photovoltaic Application.-In: "Semiconductor
Microelectronics"; Proceedings of the Fourth National Conference,
Tsakhcadzor , Armenia , May 29-31, 2003, pp. 156-159. 19. V.A.Gevorkyan, V.M.Aroutiounian, K.M.Gambaryan, M.S.Kazaryan,
K.J.Touryan, M.W.Wanlass. Liquid-Phase
Electroepitaxial Growth of Low Band-Gap p-InAsPSb/n-InAs and p-InAsP/n-InAs
Diode Heterostructures for Thermo-Photovoltaic Application.-Thin Solid
Films, Volumes 451-452, 22 March 2004, p.p. 124-127. 20. V.A.Gevorkyan, V.M.Aroutiounian, K.M.Gambaryan, K.J.Touryan,
M.W.Wanlass. Liquid-Phase Electroepitaxial Growth
of Low Band - Gap p-InAsPSb/n-InAs Heterostructures for Thermo - Photovoltaic
Application.-World Renewable Energy Congress-VIII, August 28-September
3, 2004, Denver, Colorado, USA (Electronic Version). 21. V.A.Gevorkyan, V.M.Aroutiounian, K.M.Gambaryan. Liquid-Phase Epitaxial and Electroepitaxial Growth of
InAsPSb/InAs Diode Heterostructures for Mid-Infrared Application.-6th
International Conference on Mid-Infrared Optoelectronics Materials and
Devices (MIOMD-VI), Book of Abstracts, p.p. 102-103, June 28-July 2, 2004,
St. Petersburg, Russia. 22. V.A.Gevorkyan, K.M.Gambaryan, A.H.Arakelyan, M.S.Kazaryan,
T.Boeck, P.-M.Wilde. The Epitaxial Growth of Low
Band-Gap InAs Based Diode Heterostructures For Thermo-Photovoltaic
Application. "ENERGY FOR FUTURE"; The Second Renewable
Energy Conference, 27-28 June 2005, Yerevan, Armenia; Book of Abstracts, p.
39; Conference Proceedings, p.p. 111-114. 23. V.A.Gevorkyan, K.M.Gambaryan, A.H.Arakelyan, M.S.Kazaryan,
H.S.Chilingaryan, T.Boeck, P.-M.Wilde. Low
Band-Gap InAsPSb / InAs Diode Heterostructures for Thermo-Photovoltaic
Application.-The Fifth International Conference on Semiconductor
Micro-and Nano-Electronics, Aghveran, Armenia, 16-18 September 2005, p.p.
206-209. 24. V.A.Gevorkyan, K.M.Gambaryan, A.H.Arakelyan, M.S.Kazaryan,
T.Boeck, P.-M.Wilde. The Epitaxial Growth of Low
Band-Gap InAs Based Diode Heterostructures For Thermo-Photovoltaic
Application.-International Scientific Journal for Alternative Energy
and Ecology, ISJAEE, No. 2(34), 2006, p.p. 47-50. 25. V.A. Gevorkyan, V.M. Aroutiounian, K.M. Gambaryan, A.H. Arakelyan,
I.A. Andreev, L.V. Golubev and Yu.P. Yakovlev. The
Growth of Low Band-Gap InAsSbP Based Diode Heterostructures for
Thermo-Photovoltaic Application.-In: Thermophotovoltaic Generation of
Electricity. Proceedings of 7th World TPV Conference, 28-27 September 2006,
El Escorial, Madrid, Spain (Oral Presentation), p.p. TPV 4.4. 26. V.A.Gevorkyan,
V.M.Aroutiounian, K.M.Gambaryan, A.H.Arakelyan, I.A.Andreev, L.V.Golubev and
Yu.P.Yakovlev. Thermophotovoltaic Converters on
Indium Arsenide-based Compounds. - Solid-State Electronics, v. 52, No.
3, 2007, p.p 339-344 (Zhurnal Tekhnicheskoy Fiziki (Russia), v. 77, No. 3,
2007, p.p. 49-54). 27. V.A.Gevorkyan,
V.M.Aroutiounian, K.M.Gambaryan, I.A.Andreev, L.V.Golubev and Yu.P.Yakovlev. Indium Arsenide Based Diode Heterostructures for
Thermo-Photovoltaic Application. - In: Proceedings of the 8th
International Conference on Mid-Infrared Optoelectronics (MIOMD-8): Materials
and Devices, 14-16 May 2007, Bad Ischl, Austria, p.p. 158-159. (Poster
Presentation). 28. V.A.Gevorkyan,
K.M.Gambaryan, M.S.Kazaryan. The Growth and Investigations
of Indium Arsenide Based Diode Heterostructures for Mid-Infrared
Application.- In: Proc. of The Sixth International Conference on
Semiconductor Micro- and Nano-Electronics, Tsakhcadzor, Armenia, 16-18
September 2007, p.p. 123-126. 29. K.M.Gambaryan. The Technological Methods for Semiconductors Epitaxial
Films Growth. - Yerevan, 2008, 45 p.p., (Course / Manual). 30. V.A.Gevorkyan,
V.M.Aroutiounian, K.M.Gambaryan, I.A.Andreev, L.V.Golubev and Yu.P.Yakovlev. InAsSbP/InAs Heterostructures for Thermo-Photovoltaic
Converters: Fabrication and Properties. - Technical Physics Letters,
V. 34, No. 1, 2008, p.p. 69-71. (Pis'ma v Zhurnal Tekhnicheskoy Fiziki
(Russia), V. 34, No. 2, 2008, p.p. 55-61.). 31. K.M.Gambaryan,
V.M.Aroutiounian, T.Boeck, M.Schulze. The Growth
of InAs-Based Diode Heterostructures with Quantum Dots as a New Material for
Thermophotovoltaic Application. -World Renewable Energy Congress
(WREC-X), Glasgow, UK, 2008, p.p. 1223-1228. (Editor A. Sayigh (c) 2008
WREC). 32. K.M.Gambaryan,
V.M.Aroutiounian, T.Boeck, M.Schulze, P.G.Soukiassian. The Liquid Phase Epitaxy of Self-Assembled
InAsSbP-based Strain Induced Islands on InAs Substrates and Their Evolution
from Pyramids to Quantum Dots. -Armenian Journal of Physics, 2008, Volume
1, No. 1, p.p. 28-37. 33. V.A.Gevorkyan,
K.M.Gambaryan, M.S.Kazaryan. The Growth and
Investigations of Indium Arsenide Based Diode Heterostructures for
Mid-Infrared Application. - Armenian Journal of Physics, 2008, Volume
1, No. 1, p.p. 112-117. 34. K.M.Gambaryan,
V.M.Aroutiounian, T.Boeck, M.Schulze, P.G.Soukiassian. Strain-Induced InAsSbP Islands and Quantum Dots Grown
by Liquid Phase Epitaxy on InAs(100) Substrate. - Journal of Physics
D: Applied Physics ("Fast Track Communication"), Volume 41, Number
16, 162004 (5pp), 21 August 2008. 35. K.M.Gambaryan,
V.M.Aroutiounian, A.K.Simonyan, T.Boeck. Shape
Transition of Strain-Induced InAsSbP Islands at Liquid-Phase Epitaxy on
InAs(100) Substrate: From Pyramid to Semiglobe. - Armenian Journal of
Physics, 2008, Volume 1, No. 3, p.p. 208-218. 36. K.M.Gambaryan,
V.M.Aroutiounian, T.Boeck, M.Schulze. The growth
of InAs-based diode heterostructures with quantum dots as a new material for
thermophotovoltaic application. - Physica Status Solidi C, v. 6, No.
6, p.p. 1456-1459, 2009. (The 35th International Symposium on Compound
Semiconductors (ISCS-2008), "Europa -Park", Rust, Freiburg,
Germany, 21-24 September, 2008). 37. K.M.Gambaryan. Overview of InAs-based III-V Compound and Si/Ge Semiconductor
Epitaxial Strain-Induced Islands and Quantum Dots Grown by Liquid Phase
Epitaxy. - Armenian Journal of
Physics, 2008. Volume 1, No. 4, p.p. 247-267. 38. K.M.Gambaryan. Cooperative nucleation of strain-induced InAsSbP
quantum dots and pits on InAs(100) substrate by liquid phase epitaxy.
- In: "Semiconductor micro- and nanoelectronics", Proceedings of
the 7th International Conference, Tsakhcadzor, Armenia, July 3-5, 2009, p.p.
176-179. 39. V.M.Aroutiounian,
K.M.Gambaryan, N.G.Alaverdyan, A.K.Simonyan. Nucleation
mechanism of strain-induced InAsSbP quantum dots and pits at liquid phase
epitaxy on InAs(100) substrate. - In: "Semiconductor micro- and
nanoelectronics", Proceedings of the 7th International Conference,
Tsakhcadzor, Armenia, July 3-5, 2009, p.p. 164-167. 40. V.M.Aroutiounian,
A.Z.Adamyan, E.A.Khachaturyan, K.M.Gambaryan, Z.N.Adamyan, V.M.Arakelyan. Development of program-controlled titania nanotube
array formation technique. - In: "Semiconductor micro- and
nanoelectronics", Proceedings of the 7th International Conference,
Tsakhcadzor, Armenia, July 3-5, 2009, p.p. 168-171. 41. P.G.Soukiassian,
K.M.Gambaryan, M.Silly, H.Enriquez, F.Charra, T.Boeck, M.Schulze,
V.M.Aroutiounian. Strain-Induced Quantum Wires
and Quantum Dots Formation at Compound Semiconductors Surfaces
(Self-organized Nano-Objects at 3C-SiC and InAs Compound Semiconductor (100)
Surfaces). - The 12th International Conference on the Formation of
Semiconductor Interfaces. From Semiconductors to Nanoscience and Applications
with Biology (ICFSI-12). Weimar, Germany, 5-10 July, 2009, Book of Abstracts,
p. 112. 42. P.G.Soukiassian, H.Enriquez,
K.M.Gambaryan, V.Derycke, M.D’angelo, M.Silly, T.Boeck, M.Schulze,
T.Schuelli, G.Renaud and V.M.Aroutiounian. Self-organized
nano-objects at 3C-SiC and InAs compound semiconductor (100) surfaces. -
10th International Conference on Atomically Controlled Surfaces, Interfaces
and Nanostructures-ACSIN-10, 19-25 September 2009, Granada, Spain, p.p. XX. 43. K.M.Gambaryan,
V.M.Aroutiounian. Interaction and cooperative
nucleation of InAsSbP quantum dots and pits on InAs(100) substrate. -
In Proceedings: "Collaborative Conference on Interacting
Nanostructures" (CCIN-09), November 9-13, 2009, San Diego, CA, USA,
"Springer", Book of Abstracts, p. 22. (Oral Presentation). 44. K.M. Gambaryan. Cooperative nucleation of strain-induced InAsSbP
quantum dots and pits on InAs(100) substrate by liquid phase epitaxy. -
Armenian Journal of Physics, 2009, v. 2, issue 4, p.p. 286-290. 45. V.M.Aroutiounian, K.M.Gambaryan,
N.G.Alaverdyan, A.K.Simonyan. Nucleation
mechanism of strain-induced InAsSbP quantum dots and pits at liquid phase
epitaxy on InAs(100) substrate. - Armenian Journal of Physics, 2009,
v. 2, issue 4, p.p. 268-273. 46. K.M.Gambaryan. Interaction and cooperative nucleation of InAsSbP
quantum dots and pits on InAs(100) substrate. - Nanoscale Research
Letters, vol. 5, issue 3, p.p. 587-591, 2010. DOI: 10.1007/s11671-009-9510-8.
47. V.M.Aroutiounian,
K.M.Gambaryan and P.Soukiassian. Competing
Nucleation Mechanisms and Growth of InAsSbP Quantum Dots and Nano-Pits on the
InAs(100) Surface. - Surface Science, 2010. DOI:
10.1016/j.susc.2010.03.027. 48. O.Marquardt, K.M.Gambaryan,
V.M.Aroutiounian, T.Hickel and J.Neugebauer. Growth
process, characterization and optoelectronic properties of InAsSbP dot-pit
cooperative nanostructures. - Villa Conference on Interactions among
Nanostructures, June 21-25, 2010 Santorini, G reece. (Oral Presentation). 49. K.M.Gambaryan,
V.M.Aroutiounian and V.G.Harutyunyan. InAsSbP-based
diode heterostructures and photoresistors with quantum dots for
thermophotovoltaic and other mid-infrared applications. - World
Renewable Energy Congress XI, WREC-2010 and Exhibition, 25-30 September 2010,
Abu Dhabi, UAE. |
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